Stacked independently contacted field effect transistor having electrically separated first and second gates

US10164121B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Ryan M. Hatcher · Austin, US
• Borna J. Obradovic · Leander, US
• Joon Goo Hong · Austin, US
• Rwik Sengupta · Austin, US

Key dates

• Filing date: Jun 13, 2016
• Grant date: Dec 25, 2018
• Expiry date: Jun 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A semiconductor device including: a substrate; a first active layer on the substrate and including a first channel between a source and a drain; a second active layer stacked on the first active layer, the second active layer including a second channel between the source and the drain; a first gate corresponding to the first channel; and a second gate electrically separated from the first gate and corresponding to the second channel.