Inventor · Leander, TX, US

Borna J. Obradovic

82Patents
12h-index
37Co-inventors
84Inventor score

Filing activity: Dec 28, 2002 → Apr 10, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9287357B2 Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same Emerging Cross-Sectional Technologies 65 Active
US9570609B2 Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same Electricity 48 Active
US9461114B2 Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same Performing Operations; Transporting 42 Active
US9490323B2 Nanosheet FETs with stacked nanosheets having smaller horizontal spacing than vertical spacing for large effective width Electricity 33 Active
US9647098B2 Thermionically-overdriven tunnel FETs and methods of fabricating the same Electricity 33 Active
US9711414B2 Strained stacked nanosheet FETS and/or quantum well stacked nanosheet Electricity 31 Active
US9812449B2 Multi-VT gate stack for III-V nanosheet devices with reduced parasitic capacitance Electricity 29 Active
US9853114B1 Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same Electricity 21 Active
US10026652B2 Horizontal nanosheet FETs and method of manufacturing the same Electricity 19 Active
US9466669B2 Multiple channel length finFETs with same physical gate length Electricity 15 Active
US9741811B2 Integrated circuit devices including source/drain extension regions and methods of forming the same Electricity 13 Active
US9484423B2 Crystalline multiple-nanosheet III-V channel FETs Electricity 12 Active
US9905672B2 Method of forming internal dielectric spacers for horizontal nanosheet FET architectures Electricity 11 Active
US10878317B2 Method and system for performing analog complex vector-matrix multiplication Physics 10 Active
US9793403B2 Multi-layer fin field effect transistor devices and methods of forming the same Electricity 9 Active
US9653287B2 S/D connection to individual channel layers in a nanosheet FET Electricity 9 Active
US10566330B2 Dielectric separation of partial GAA FETs Electricity 8 Active
US9178045B2 Integrated circuit devices including FinFETS and methods of forming the same Electricity 7 Active
US9831323B2 Structure and method to achieve compressively strained Si NS Electricity 7 Active
US9960232B2 Horizontal nanosheet FETs and methods of manufacturing the same Electricity 7 Active
US8119470B2 Mitigation of gate to contact capacitance in CMOS flow Emerging Cross-Sectional Technologies 6 Active
US7537988B2 Differential offset spacer Electricity 6 Active
US9013167B2 Hall effect device having voltage based biasing for temperature compensation Physics 6 Active
US10164121B2 Stacked independently contacted field effect transistor having electrically separated first and second gates Electricity 5 Active
US7727838B2 Method to improve transistor Tox using high-angle implants with no additional masks Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.