Junction barrier schottky diode with enhanced surge current capability
US10164126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2018 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jan 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor power rectifier with increased surge current capability is described. A semiconductor layer includes a drift layer having a first conductivity type, at least one pilot region having a second conductivity type different from the first conductivity type, a plurality of stripe-shaped emitter regions having the second conductivity type, and a transition region having the second conductivity type, wherein the at least one pilot region has in any lateral direction parallel to the first main side a width of at least 200 μm and is formed adjacent to the first main side to form a first p-n junction with the drift layer, each emitter region is formed adjacent to the first main side form a second p-n junction with the drift layer, and the transition region is formed adjacent to the first main side to form a third p-n junction with the drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.