Lars Knoll
13Patents
1h-index
10Co-inventors
40Inventor score
Filing activity: Jan 3, 2018 → Feb 25, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10490658B2 | Power semiconductor device | Electricity | 1 | Active |
| US10164126B2 | Junction barrier schottky diode with enhanced surge current capability | Electricity | 1 | Active |
| US12230675B2 | Planar SiC MOSFET with retrograde implanted channel | Electricity | 0 | Active |
| US12062698B2 | Silicon carbide transistor device | Electricity | 0 | Active |
| US10516022B2 | Method for manufacturing a semiconductor device | Electricity | 0 | Active |
| US12426343B2 | Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereof | Electricity | 0 | Active |
| US10553437B2 | Semiconductor device and method for manufacturing such a semiconductor device | Electricity | 0 | Active |
| US10361082B2 | Semiconductor device and method for manufacturing such a semiconductor device | Electricity | 0 | Active |
| US11888037B2 | Self-aligned field plate mesa FPM SiC schottky barrier diode | Electricity | 0 | Active |
| US11302811B2 | Silicon carbide power device with MOS structure and stressor | Electricity | 0 | Active |
| US11967616B2 | Vertical silicon carbide power MOSFET and IGBT and a method of manufacturing the same | Electricity | 0 | Active |
| US11031473B2 | Silicon carbide superjunction power semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US12113131B2 | Strain enhanced SiC power semiconductor device and method of manufacturing | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.