Multi-layered magnetic thin film stack and data storage device having the same
US10164172B2 · kind B2 · utility
2Cited by
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18Claims
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Key dates
| Filing date | Apr 12, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Apr 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a multi-layered magnetic thin film stack, a magnetic tunneling junction, and a data storage device. The multi-layered magnetic thin film stack includes a FePd alloy layer including an alloy of iron (Fe) and palladium (Pd); a tunneling barrier layer, which includes MgO and is disposed on the FePd alloy layer; and a Heusler alloy layer disposed between the FePd alloy layer and the tunneling barrier layer, wherein the FePd alloy layer and the Heusler alloy layer constitute a hybrid magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.