Magnetic random access memory devices and methods of manufacturing the same
US10164173B2 · kind B2 · utility
2Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Aug 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.