Inventor · Hwaseong-si, KR

Jun-Soo Bae

35Patents
12h-index
38Co-inventors
77Inventor score

Filing activity: May 24, 2004 → Jul 25, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US7351594B2 Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Electricity 100 Active
US7352021B2 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Electricity 94 Expired
US7378698B2 Magnetic tunnel junction and memory device including the same Electricity 48 Expired
US8134866B2 Phase change memory devices and systems, and related programming methods Physics 44 Active
US8050084B2 Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device Physics 37 Active
US7800095B2 Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory Electricity 31 Active
US7425735B2 Multi-layer phase-changeable memory devices Physics 26 Active
US7615401B2 Methods of fabricating multi-layer phase-changeable memory devices Physics 23 Active
US7558100B2 Phase change memory devices including memory cells having different phase change materials and related methods and systems Physics 19 Active
US8116117B2 Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device Physics 16 Active
US7778066B2 Resistance variable memory device and programming method thereof Physics 16 Active
US7787278B2 Resistance variable memory device and operating method thereof Physics 15 Active
US7767568B2 Phase change memory device and method of fabricating the same Electricity 12 Active
US8139432B2 Variable resistance memory device and system thereof Physics 10 Active
US7141438B2 Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same Electricity 10 Expired
US7541199B2 Methods of forming magnetic memory devices including oxidizing and etching magnetic layers Electricity 9 Active
US8143653B2 Variable resistance memory device and system thereof Physics 8 Active
US7218556B2 Method of writing to MRAM devices Physics 5 Expired
US8238147B2 Multi-level phase change memory device, program method thereof, and method and system including the same Emerging Cross-Sectional Technologies 4 Active
US7692176B2 Phase-changeable memory devices including an adiabatic layer Electricity 3 Expired
US7645619B2 Magnetic random access memory device and method of forming the same Emerging Cross-Sectional Technologies 3 Active
US8035145B2 Magnetic memory device Electricity 2 Active
US7943918B2 Multi-layer phase-changeable memory devices Physics 2 Active
US7582890B2 Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof Electricity 2 Expired
US10164173B2 Magnetic random access memory devices and methods of manufacturing the same Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.