Integration of photonic, electronic, and sensor devices with SOI VLSI microprocessor technology

US10168477B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Aydin Babakhani · Houston, US
• Steven A. Cordes · Yorktown Heights, US
• Jean-Olivier Plouchart · New York, US
• Scott K. Reynolds · Amawalk, US
• Peter J. Sorce · Poughkeepsie, US
• Robert E. Trzcinski · Rhinebeck, US

Key dates

• Filing date: Nov 17, 2016
• Grant date: Jan 1, 2019
• Expiry date: Dec 23, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/92242
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

According to an aspect of the present principles, methods are provided for fabricating an integrated structure. A method includes forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure. The method further includes mounting the VLSI structure to a support structure. The method additionally includes removing at least a portion of the semiconductor layer from the VLSI structure. The method also includes attaching an upper layer to the top of the VLSI structure. The upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than the semiconductor layer. The upper layer includes at least one hole for at least one of a photonic device or an electronic device. The method further includes releasing said VLSI structure from the support structure.