3D spinram
US10170171B2 · kind B2 · utility
3Cited by
22References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Dec 7, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.