Integrated Magnetoelectronics Corp.
21Patents
8Active
21Granted
41Portfolio score
Filing activity: Apr 30, 1997 → Jul 21, 2020 · 2 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6031273A | All-metal, giant magnetoresistive, solid-state component | Electricity | 67 | Expired |
| US5929636A | All-metal giant magnetoresistive solid-state component | Electricity | 38 | Expired |
| US6483740B2 | All metal giant magnetoresistive memory | Physics | 36 | Expired |
| US6469927B2 | Magnetoresistive trimming of GMR circuits | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6573713B2 | Transpinnor-based switch and applications | Electricity | 18 | Expired |
| US6594175B2 | High density giant magnetoresistive memory cell | Physics | 14 | Expired |
| US6859063B2 | Transpinnor-based transmission line transceivers and applications | Electricity | 13 | Expired |
| US6992919B2 | All-metal three-dimensional circuits and memories | Physics | 13 | Expired |
| US7220968B2 | Radiation detector having all-metal circuitry operation of which is based on electron spin | Physics | 12 | Expired |
| US6538437B2 | Low power magnetic anomaly sensor | Physics | 11 | Expired |
| US7005852B2 | Displays with all-metal electronics | Physics | 9 | Expired |
| US6738284B2 | Transpinnor-based sample-and-hold circuit and applications | Electricity | 8 | Expired |
| US7224566B2 | Interfaces between semiconductor circuitry and transpinnor-based circuitry | Electricity | 7 | Expired |
| US7911830B2 | Scalable nonvolatile memory | Emerging Cross-Sectional Technologies | 7 | Active |
| US8300455B2 | Scalable nonvolatile memory | Emerging Cross-Sectional Technologies | 6 | Active |
| US8619467B2 | High GMR structure with low drive fields | Emerging Cross-Sectional Technologies | 5 | Active |
| US10170171B2 | 3D spinram | Physics | 3 | Active |
| US9741923B2 | SpinRAM | Physics | 3 | Active |
| US10762940B2 | Narrow etched gaps or features in multi-period thin-film structures | Physics | 1 | Active |
| US11222676B2 | Narrow etched gaps or features in multi-period thin-film structures | Physics | 0 | Active |
| USRE48879E1 | Spinram | General | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.