Resistive memory apparatus and setting method for resistive memory cell thereof
US10170184B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Oct 11, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0078
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory apparatus and a setting method for a resistive memory cell thereof are provided. The setting method includes: performing a first setting operation on the resistive memory cell, and performing a first verifying operation on the resistive memory cell after the first setting operation is finished; determining whether to perform a first resetting operation on the resistive memory cell according to a verifying result of the first verifying operation, and performing a second verifying operation on the resistive memory cell after the first resetting operation is determined to be performed and is finished; and determining whether to perform a second resetting operation on the resistive memory cell according to a verifying result of the second verifying operation, and performing a third verifying operation on the resistive memory cell after the second resetting operation is determined to be performed and is finished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.