Semiconductor devices, via structures and methods for forming the same
US10170397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2016 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Jul 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a via structure penetrating through a substrate, a top metal layer and an electronic component over the via structure, and a bottom metal layer and another electronic component below the via structure. The via structure includes a through hole penetrating from a first surface to an opposite second surface of a substrate, a filling insulating layer within the through hole, a first conductive layer, which is within the through hole and surrounds the filling insulating layer, wherein a portion of the first conductive layer is below the filling insulating layer and at the bottom of the through hole. The via structure further includes a first insulating layer, which is on the sidewalls of the through hole and surrounds the first conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.