Switching device
US10170470B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 23, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Aug 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A switching device may include a semiconductor substrate; gate trenches; bottom insulating layers covering bottom surfaces of the gate trenches; gate insulating layers covering side surfaces of the gate trenches; and gate electrodes arranged in the gate trenches. The gate insulating layers in a center portion may have a first thickness and a first dielectric constant, and one or more of the gate insulating layers in a peripheral portion may have, within at least a part of the peripheral portion, a second thickness thicker than the first thickness and a second dielectric constant greater than the first dielectric constant. The semiconductor substrate may include a first region being in contact with the gate insulating layers, a body region being in contact with the gate insulating layers under the first region, and a second region being in contact with the gate insulating layers under the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.