Method of manufacturing a device with a cavity
US10171007B2 · kind B2 · utility
1Cited by
8References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 19, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Dec 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a substrate having a first sacrificial oxide region, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region. The method further includes covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluoric acid (HF) etchant and selectively etching the first sacrificial oxide region through the first porous layer using the vapor HF etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.