Semiconductor device
US10176998B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 25, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Apr 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a dielectric layer and a floating gate. The dielectric layer disposed on the substrate. The floating gate disposed on the dielectric layer. After a first programming process, the floating gate is configured to store first electrons that are to be combined with ions from the dielectric layer. After a second programming process, the floating gate is configured to store second electrons, and a number of the second electrons is larger than a number of the first electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.