High temperature substrate pedestal module and components thereof
US10177024B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2015 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Oct 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68792
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate processing apparatus comprises a vacuum chamber in which a semiconductor substrate may be processed, a showerhead module through which process gas from a process gas source is supplied to a processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen, a stem having a side wall defining a cylindrical interior region thereof, a lower surface, and an upper end that supports the platen, and an adapter having a side wall defining a cylindrical interior region thereof and an upper surface that supports the stem. The lower surface of the stem includes a gas inlet in fluid communication with a respective gas passage located in the side wall of the stem and a gas outlet located in an annular gas channel in the upper surface of the adapter. The upper surface of the adapter includes an inner groove located radially inward of the gas outlet and an outer groove located radially outward of the inner groove. The inner groove and the outer groove have respective O-rings therein so as to form a vacuum seals during processing. The platen includes at least one platen gas passage in fluid communication with a respecti…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.