Element chip and method for manufacturing the same
US10177063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Jul 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an element chip includes a protection film stacking step of staking a protection film to the element region, and the dividing region, the part of the exposed second damaged region and a protection film etching step of removing a part of the protection film which is stacked on the dividing region and the protection film which is stacked on the element region by exposing the substrate to second plasma and remaining the protection film for covering the part of the second damaged region. Furthermore, the method for manufacturing an element chip includes a plasma dicing step of dividing the substrate to a plurality of element chips by exposing the substrate to third plasma in a state where the second main surface is supported by a supporting member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.