Heat-dissipating structure and semiconductor module using same
US10177069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2015 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.