FinFET device and method for fabricating the same
US10177143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2015 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Oct 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a semiconductor substrate, at least one first isolation structure, at least one second isolation structure, a source structure, a drain structure and a plurality of semiconductor fins. The first isolation structure and the second isolation structure are located on the semiconductor substrate. The source structure is located on the semiconductor substrate and the first isolation structure, in which at least one first gap is located between the source structure and the first isolation structure. The drain structure is located on the semiconductor substrate and the second isolation structure, in which at least one second gap is located between the drain structure and the second isolation structure. The semiconductor fins protrude from the semiconductor substrate, in which the semiconductor fins are spaced apart from each other, and connect the source structure and the drain structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.