Image sensor device and method for forming the same
US10177191B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Nov 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A method for forming an image sensor device is provided. The method includes providing a substrate. The substrate has a front surface and a back surface, and the substrate has a light-receiving region and a device region. The method includes forming a first transistor and a first source/drain structure respectively in the light-receiving region and the device region. The first transistor includes a first gate structure, a light-sensing structure, a second source/drain structure, the first gate structure is over the front surface, the light-sensing structure and the second source/drain structure are formed in the substrate and are respectively located at opposite first sides of the first gate structure, the first source/drain structure is formed in the substrate, and the first source/drain structure is electrically connected to the second source/drain structure. The method includes forming a light-blocking layer over the back surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.