Kuo-Cheng Lee
215Patents
7h-index
80Co-inventors
77Inventor score
Filing activity: Aug 14, 1980 → Jun 11, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9799697B2 | Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters | Electricity | 13 | Active |
| US10854530B1 | Heat dissipation structures | Electricity | 13 | Active |
| US9281338B2 | Semiconductor image sensor device having back side illuminated image sensors with embedded color filters | Electricity | 9 | Active |
| US9570493B2 | Dielectric grid bottom profile for light focusing | Electricity | 9 | Active |
| US9368531B2 | Formation of buried color filters in a back side illuminated image sensor with an ono-like structure | Electricity | 8 | Active |
| US9786704B2 | CMOS image sensor structure with crosstalk improvement | Electricity | 7 | Active |
| US4371331A | Cigarette lighter with flip-out windshield | Mechanical Engineering; Lighting; Heating | 7 | Expired |
| US8522079B2 | System and method for multi-core synchronous debugging of a multi-core platform | Physics | 7 | Active |
| US9525001B2 | Semiconductor device and manufacturing method thereof | Electricity | 7 | Active |
| US9553118B2 | Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer | Electricity | 7 | Active |
| US10504952B2 | Increased optical path for long wavelength light by grating structure | Electricity | 6 | Active |
| US10276620B2 | Image sensor device and method for forming the same | Electricity | 6 | Active |
| US9130077B2 | Structure of dielectric grid with a metal pillar for semiconductor device | Electricity | 6 | Active |
| US9543353B2 | Formation of buried color filters in a back side illuminated image sensor with an ONO-like structure | Electricity | 6 | Active |
| US10181491B2 | Semiconductor image sensor device having back side illuminated image sensors with embedded color filters | Electricity | 5 | Active |
| US10177191B1 | Image sensor device and method for forming the same | Electricity | 5 | Active |
| US9825085B2 | Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer | Electricity | 5 | Active |
| US10566361B2 | Wide channel gate structure and method of forming | Electricity | 5 | Active |
| US10692826B2 | Semiconductor structure and method for forming the same | Electricity | 5 | Active |
| US9812488B2 | Backside illuminated image sensor and method of manufacturing the same | Electricity | 5 | Active |
| US10483310B2 | Isolation structure for reducing crosstalk between pixels and fabrication method thereof | Electricity | 4 | Active |
| US10790321B2 | CMOS image sensor having indented photodiode structure | Electricity | 4 | Active |
| US8803271B2 | Structures for grounding metal shields in backside illumination image sensor chips | Electricity | 4 | Active |
| US9847363B2 | Semiconductor device with a radiation sensing region and method for forming the same | Electricity | 4 | Active |
| US10304885B1 | Color filter uniformity for image sensor devices | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.