Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces
US10177247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Aug 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/196
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A precursor cell for a transistor having a foundation structure, a mask structure, and a gallium nitride (GaN) PN structure is provided. The mask structure is provided over the foundation structure to expose a first area of a top surface of the foundation structure. The GaN PN structure resides over the first area and at least a portion of the mask structure and has a continuous crystalline structure with no internal regrowth interfaces. The GaN PN structure comprises a drift region over the first area, a control region laterally adjacent the drift region, and a PN junction formed between the drift region and the control region. Since the drift region and the control region form the PN junction having no internal regrowth interfaces, the GaN PN structure has a continuous crystalline structure with reduced regrowth related defects at the interface of the drift region and the control region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.