Patent · US Active

Optoelectronic device comprising light-emitting diodes with improved light extraction

US10177288B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignees

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
ALEDIA · FR

Inventors

Tiphaine Dupont · Grenoble, FR
Yohan Desieres · Le Pont-de-Claix, FR

Key dates

Filing date	Mar 22, 2018
Grant date	Jan 8, 2019
Priority date	—
Expiry date	Mar 22, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/855
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.