Wet etch chemistry for selective silicon etch
US10179878B2 · kind B2 · utility
3Cited by
1References
20Claims
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Key dates
| Filing date | Jul 24, 2017 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Jul 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.