Inventor · Hsinchu, TW

Ming-Hsi Yeh

125Patents
6h-index
99Co-inventors
77Inventor score

Filing activity: Nov 26, 2003 → Jun 28, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9761684B2 Method and structure for metal gates Electricity 24 Active
US9431304B2 Method and structure for metal gates Electricity 24 Active
US7179867B2 Thermosensitive biodegradable copolymer Chemistry; Metallurgy 12 Expired
US8735252B2 Method of semiconductor integrated circuit fabrication Electricity 9 Active
US8657963B2 In-situ backside cleaning of semiconductor substrate Electricity 7 Active
US9461144B2 Method for semiconductor device fabrication Electricity 7 Active
US10283417B1 Self-protective layer formed on high-k dielectric layers with different materials Electricity 6 Active
US8759173B2 Finlike structures and methods of making same Electricity 5 Active
US10811320B2 Footing removal in cut-metal process Electricity 5 Active
US8921177B2 Method of fabricating an integrated circuit device Emerging Cross-Sectional Technologies 5 Active
US8357574B2 Method of fabricating epitaxial structures Electricity 5 Active
US8541270B2 Finlike structures and methods of making same Electricity 5 Active
US8926762B2 Apparatus and methods for movable megasonic wafer probe Electricity 5 Active
US8518634B2 Cleaning process for semiconductor device fabrication Electricity 5 Active
US10170317B1 Self-protective layer formed on high-k dielectric layer Electricity 4 Active
US10283503B2 Metal gate structure and methods thereof Electricity 4 Active
US8889502B2 Finlike structures and methods of making same Electricity 3 Active
US10361133B2 High-K metal gate and method for fabricating the same Electricity 3 Active
US10179878B2 Wet etch chemistry for selective silicon etch Electricity 3 Active
US8703594B2 Semiconductor device having a treated gate structure and fabrication method thereof Electricity 3 Active
US11114436B2 Metal gate structure and methods thereof Electricity 2 Active
US11557512B2 Wet cleaning with tunable metal recess for via plugs Electricity 2 Active
US10490410B2 Self-protective layer formed on high-K dielectric layer Electricity 2 Active
US10748898B2 Metal gate structure and methods thereof Electricity 2 Active
US11201084B2 Fin field-effect transistor device and method of forming the same Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.