Patent · US Active

Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride

US10181399B2 · kind B2 · utility

0Cited by

1References

11Claims

0Family size

Assignee

Saint-Gobain Lumilog · FR

Inventors

Bernard Beaumont · Le Tignet, FR
Jean-Pierre Faurie · Valbonne, FR

Key dates

Filing date	Jul 27, 2015
Grant date	Jan 15, 2019
Priority date	—
Expiry date	Jul 27, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/825
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a semi-conducting material including a layer of nitride of a group 13 element comprising active areas for manufacturing electronic components, and inactive areas, the active and inactive areas extending on a front face of the layer of nitride, the method comprising steps consisting of:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.