Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device
US10181517B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Aug 25, 2016 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Aug 25, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/18
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a C-plane, and a Burgers vector including at least a component in a C-axis direction. In addition, a density of the threading dislocations having angles, each of which is formed by an orientation of the Burgers vector and an orientation of the dislocation line, larger than 0° and within 40° is set to 300 dislocations/cm2 or less. Furthermore, a density of the threading dislocations having the angles larger than 40° is set to 30 dislocations/cm2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.