Patent · US Active

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

US10181547B2 · kind B2 · utility

0Cited by
4References
18Claims
0Family size

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Key dates

Filing dateNov 4, 2013
Grant dateJan 15, 2019
Priority date
Expiry dateDec 6, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8316

Abstract

An optoelectronic semiconductor chip (1) is provided which has a semiconductor body comprising a semiconductor layer sequence (2) with an active region (20) provided for generating and/or receiving radiation, a first semiconductor region (21) of a first conduction type, a second semiconductor region (22) of a second conduction type and a cover layer (25). The active region (20) is arranged between the first semiconductor region (21) and the second semiconductor region (22) and comprises a contact layer (210) on the side remote from the active region. The cover layer (25) is arranged on the side of the first semiconductor region (21) remote from the active region (20) and comprises at least one cut-out (27), in which the contact layer (210) adjoins the first connection layer (3). The cover layer is of the second conduction type. Furthermore, a method is provided for producing optoelectronic semiconductor chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.