Markus Broell
13Patents
1h-index
37Co-inventors
46Inventor score
Filing activity: Sep 25, 2013 → Nov 12, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9799801B2 | Method for producing an optoelectronic semiconductor chip | Electricity | 2 | Active |
| US11362237B2 | High-efficiency red micro-LED with localized current aperture | Electricity | 1 | Active |
| US11309464B2 | Micro-LED design for chief ray walk-off compensation | Physics | 1 | Active |
| US12243906B2 | Low resistance current spreading to n-contacts of micro-LED array | Electricity | 0 | Active |
| US10181547B2 | Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips | Electricity | 0 | Active |
| US11677042B2 | Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes | Electricity | 0 | Active |
| US11502222B2 | Optoelectronic semiconductor chip based on a phosphide compound semiconductor material | Electricity | 0 | Active |
| US11848194B2 | Lateral micro-LED | Electricity | 0 | Active |
| US11476389B2 | Method for producing an optoelectronic semiconductor chip having structures at the radiation passage surface, and optoelectronic semiconductor chip having structures at the radiation passage surface | Electricity | 0 | Active |
| US10263143B2 | Semiconductor chip | Electricity | 0 | Active |
| US11094844B2 | Optoelectronic semiconductor chip with two separate light emitting layers | Electricity | 0 | Active |
| US11705370B2 | Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer | Electricity | 0 | Active |
| US9466764B2 | Optoelectronic component including a substrate on which a semiconductor layer sequence with an identifier for identifying the component is applied | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.