Reflection type phase shifter with active device tuning

US10181833B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Bayaner Arigong · San Jose, US
• Richard Wilson · معلمی نژاد, US
• Haedong Jang · San Jose, US
• Frank Trang · San Jose, US
• Timothy Canning · معلمی نژاد, US
• Rongguo Zhou · Gilroy, US

Key dates

• Filing date: Mar 16, 2017
• Grant date: Jan 15, 2019
• Expiry date: Mar 16, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/65
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.