Magnetic random access memory having improved reliability through thermal cladding
US10186308B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2018 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Jan 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Magnetic Random Access Memory (MRAM) structure having a thermally conductive, dielectric cladding material that contacts an outer side of a magnetic memory element. The magnetic memory element can be a magnetic tunnel junction element formed as a cylindrical pillar that extends between first and second electrically conductive lead layers. The cylinder of the magnetic memory element can have an outer periphery, and the cladding material can be formed to contact the entire periphery. In addition, a heat sink structure formed of a dielectric material having a high specific heat capacity can be formed to contact an outer periphery of the cladding material. The cladding material and heat sink structure efficiently conduct heat away from the sides of the memory element to prevent the temperature of the memory element to rise to unsafe levels. This advantageously assists in maintaining a high reliability and long life of the MRAM system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.