Composite semiconductor substrate
US10186421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2016 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Jan 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.