Semiconductor device and method of manufacturing the semiconductor device
US10186610B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 14, 2017 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Dec 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
On a front surface of a semiconductor base, a first n−-type drift region, a second n-type drift region, and a third n+-type drift region are provided. In the front surface of the semiconductor base, a gate trench is provided penetrating the n+-type source region and the p-type base region, and reaching the second n-type drift region. Between adjacent gate trenches, a contact trench is provided that penetrates the n+-type source region, the p-type base region, and the second and third n-type drift regions, and that reaches the p-type semiconductor region. A source electrode embedded in the contact trench is in contact with the p-type semiconductor region at the bottom and the corners of the contact trench and forms a Schottky junction with the third n+-type drift region and the second n-type drift region at a side wall of the contact trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.