Semiconductor device
US10186615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2018 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Feb 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
Abstract
A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.