Memory device and method of manufacturing memory device
US10186658B2 · kind B2 · utility
4Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2013 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Nov 21, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the electrodes being extended in a second direction that differs from the first direction and being shared by the plurality of storage elements disposed in the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.