Minoru Ikarashi
34Patents
7h-index
25Co-inventors
69Inventor score
Filing activity: Mar 25, 1999 → Aug 7, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7881097B2 | Storage element and memory | Emerging Cross-Sectional Technologies | 101 | Active |
| US6534203B2 | Magnetic recording medium | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6621731B2 | Magnetic memory device | Physics | 19 | Expired |
| US7119419B2 | Detailed description of the presently preferred embodiments | Electricity | 15 | Expired |
| US6992342B2 | Magnetic memory device having a non-volatile magnetic section and manufacturing thereof | Electricity | 13 | Expired |
| US6621666B2 | Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity | Emerging Cross-Sectional Technologies | 11 | Expired |
| US8018759B2 | Tunnel magnetic resistance effect memory | Emerging Cross-Sectional Technologies | 9 | Active |
| US7633796B2 | Storage element and memory | Emerging Cross-Sectional Technologies | 7 | Active |
| US8339840B2 | Storage element and memory | Electricity | 5 | Active |
| US8169818B2 | Recording method for magnetic memory device | Emerging Cross-Sectional Technologies | 5 | Active |
| US8331136B2 | Recording method of nonvolatile memory and nonvolatile memory | Physics | 5 | Active |
| US9466791B2 | Storage device and storage unit | Electricity | 4 | Active |
| US10186658B2 | Memory device and method of manufacturing memory device | Physics | 4 | Active |
| US8072789B2 | Resistance-change memory device | Electricity | 4 | Active |
| US6934130B2 | Magnetic device having shaped ferromagnetic film | Electricity | 4 | Expired |
| US8437180B2 | Memory and write control method | Physics | 4 | Active |
| US6883384B2 | Force sensing device having magnetized element and magneto electric material | Electricity | 2 | Expired |
| US8194443B2 | Memory device and memory | Emerging Cross-Sectional Technologies | 2 | Active |
| US10403680B2 | Switch device and storage unit | Electricity | 2 | Active |
| US7173791B2 | Ferroelectric device including a unit element having a topological outline in a C-shape or a S-shape | Electricity | 1 | Expired |
| US8659000B2 | Amorphous semiiconductor layer memory device | Physics | 1 | Active |
| US10804321B2 | Switch device and storage unit | Electricity | 1 | Active |
| US8149613B2 | Resistance variable memory device | Electricity | 1 | Active |
| US11152428B2 | Selection device and storage apparatus | Electricity | 1 | Active |
| US7345367B2 | Magnetic memory device and producing method thereof | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.