Patent · US Active

Cross scan proximity correction with ebeam universal cutter

US10191376B2 · kind B2 · utility

2Cited by
2References
22Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 22, 2014
Grant dateJan 29, 2019
Priority date—
Expiry dateJan 6, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/024
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.