Ovonic threshold switch (OTS) driver/selector uses unselect bias to pre-charge memory chip circuit and reduces unacceptable false selects
US10192616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Jun 28, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to non-volatile memory arrays and memory devices in which a leakage current through an OTS is utilized to pre-charge a circuit of a memory chip. By running an additional wire on each side of a tile which is orthogonal to, above, or below the X and Y select wires, a high value resistance material, such as an OTS, may be deposited at the intersection. The OTS allows the word line or bit line to be selected without pulling excessive leakage to the select wire from the bias voltage, such as V/2. A thickness of the OTS is adjusted such that the Vt of the OTS is greater than V/2, with margin, and the OTS does not turn on when the OTS is selected. A resistance is created between the V/2 wire and the word line select wire or the bit line select wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.