Short inorganic trisilylamine-based polysilazanes for thin film deposition

US10192734B2 · kind B2 · utility

Assignees

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR
• Air Liquide Advanced Materials LLC · US

Inventors

• Antonio Sanchez · Tsukuba, JP
• Gennadiy Itov · Flemington, US
• Reno Pesaresi · Houston, US
• Jean-Marc Girard · Versailles, FR
• Peng Zhang · Montvale, US
• Manish Khandelwal · Danbury, US

Key dates

• Filing date: Jul 27, 2017
• Grant date: Jan 29, 2019
• Expiry date: Jul 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02222
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Si-containing film forming compositions comprising Si—C free and volatile silazane-containing precursors are disclosed. The compositions may be used to deposit high purity thin films. The Si—C free and volatile silazane-containing precursors have the formulae: [(SiR3)2NSiH2]m—NH2-m—C≡N, with m=1 or 2;  (a)[(SiR3)2NSiH2]n—NL3-n,with n=2 or 3;  (b)(SiH3)2NSiH2—O—SiH2N(SiH3)2; and  (c)(SiR′3)2N—SiH2—N(SiR′3)2;  (d) with each R independently selected from H, a dialkylamino group, or an amidinate; each R′ independently selected from H, a dialkylamino group, or an amidinate, with the provision that all R′ are not H; and L is selected from H or a C1-C6 hydrocarbyl group.