Inventor · Tsukuba, JP

Antonio Sanchez

25Patents
3h-index
23Co-inventors
55Inventor score

Filing activity: Sep 19, 2014 → Feb 4, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10192734B2 Short inorganic trisilylamine-based polysilazanes for thin film deposition Electricity 321 Active
US9777025B2 Si-containing film forming precursors and methods of using the same Electricity 10 Active
US9382269B2 Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling Electricity 4 Active
US10494387B2 Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling Electricity 2 Active
US10403494B2 Si-containing film forming precursors and methods of using the same Electricity 2 Active
US10584039B2 Titanium-containing film forming compositions for vapor deposition of titanium-containing films Physics 2 Active
US9453035B2 Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling Electricity 1 Active
US10647578B2 N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications Electricity 1 Active
US11124876B2 Si-containing film forming precursors and methods of using the same Electricity 1 Active
US10689405B2 Titanium-containing film forming compositions for vapor deposition of titanium-containing films Chemistry; Metallurgy 1 Active
US11699584B2 Si-containing film forming precursors and methods of using the same Electricity 1 Active
US9920078B2 Halogen free synthesis of aminosilanes by catalytic dehydrogenative coupling Electricity 1 Active
US10544506B2 Method of forming a silicon nitride film using Si—N containing precursors Electricity 1 Active
US11274112B2 Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling Electricity 1 Active
US12173403B2 Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films Chemistry; Metallurgy 0 Active
US11021793B2 Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films Chemistry; Metallurgy 0 Active
US9920077B2 Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof Electricity 0 Active
US11739220B2 Perhydropolysilazane compositions and methods for forming oxide films using same Chemistry; Metallurgy 0 Active
US11168099B2 Titanium-containing film forming compositions for vapor deposition of titanium-containing films Chemistry; Metallurgy 0 Active
US11780859B2 Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling Electricity 0 Active
US11203528B2 N—H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications Electricity 0 Active
US11820654B2 Si-containing film forming precursors and methods of using the same Electricity 0 Active
US11407922B2 Si-containing film forming compositions and methods of making and using the same Chemistry; Metallurgy 0 Active
US11205573B2 Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof Electricity 0 Active
US10501484B2 Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.