Semiconductor structure
US10192808B1 · kind B1 · utility
1Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Jul 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate having a frontside surface and a backside surface. A through-substrate via extends into the substrate from the frontside surface. The through-substrate via comprises a top surface. A metal cap covers the top surface of the through-substrate via. A plurality of cylindrical dielectric plugs is embedded in the metal cap. The cylindrical dielectric plugs are distributed only within a central area of the metal cap. The central area is not greater than a surface area of the top surface of the through-substrate via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.