Semiconductor device and manufacturing method of semiconductor device
US10192866B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Jun 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.