Butted body contact for SOI transistor
US10192884B2 · kind B2 · utility
6Cited by
2References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 28, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Nov 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Systems, methods, and apparatus for an improved body tie construction are described. The improved body tie construction is configured to have a lower resistance body tie exists when the transistor is “off” (Vg approximately 0 volts). When the transistor is “on” (Vg>Vt), the resistance to the body tie is much higher, reducing the loss of performance associated with presence of body tie. Space efficient Body tie constructions adapted for cascode configurations are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.