Simon Edward Willard
62Patents
12h-index
25Co-inventors
84Inventor score
Filing activity: Jan 7, 1999 → Oct 21, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9843293B1 | Gate drivers for stacked transistor amplifiers | Electricity | 45 | Active |
| US10236872B1 | AC coupling modules for bias ladders | Electricity | 38 | Active |
| US9882531B1 | Body tie optimization for stacked transistor amplifier | Electricity | 36 | Active |
| US9837412B2 | S-contact for SOI | Electricity | 31 | Active |
| US10886911B2 | Stacked FET switch bias ladders | Electricity | 22 | Active |
| US6175261A | Fuse cell for on-chip trimming | Physics | 19 | Expired |
| US9847348B1 | Systems, methods and apparatus for enabling high voltage circuits | Electricity | 17 | Active |
| US10505530B2 | Positive logic switch with selectable DC blocking circuit | Electricity | 17 | Active |
| US10546747B2 | Managed substrate effects for stabilized SOI FETs | Electricity | 15 | Active |
| US10389306B2 | Gate drivers for stacked transistor amplifiers | Electricity | 14 | Active |
| US10276371B2 | Managed substrate effects for stabilized SOI FETs | Electricity | 12 | Active |
| US10672726B2 | Transient stabilized SOI FETs | Electricity | 12 | Active |
| US10700642B2 | Gate drivers for stacked transistor amplifiers | Electricity | 11 | Active |
| US10115787B1 | Low leakage FET | Electricity | 10 | Active |
| US9842858B2 | Butted body contact for SOI transistor | Electricity | 10 | Active |
| US10367453B2 | Body tie optimization for stacked transistor amplifier | Electricity | 10 | Active |
| US10784818B2 | Body tie optimization for stacked transistor amplifier | Electricity | 9 | Active |
| US10192884B2 | Butted body contact for SOI transistor | Electricity | 6 | Active |
| US11387235B2 | S-contact for SOI | Electricity | 5 | Active |
| US11601126B2 | RF switch stack with charge redistribution | Electricity | 5 | Active |
| US10630280B2 | AC coupling modules for bias ladders | Electricity | 5 | Active |
| US10438950B2 | S-contact for SOI | Electricity | 5 | Active |
| US11569812B2 | RF switch stack with charge control elements | Electricity | 5 | Active |
| US10319854B1 | High voltage switching device | Electricity | 4 | Active |
| US11329642B1 | Bypass circuitry to improve switching speed | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.