Semiconductor device and method of manufacturing the same
US10192928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.