Patent · US Active

Method for producing fin structures of a semiconductor device in a substrate

US10192956B2 · kind B2 · utility

0Cited by

0References

10Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Boon Teik Chan · Wilsele, BE
Safak Sayan · Leuven, BE
Min Soo Kim · Seoul, KR
Doni Parnell · Albany, US
Roel Gronheid · Grez-Doiceau, BE

Key dates

Filing date	Jul 7, 2016
Grant date	Jan 29, 2019
Priority date	—
Expiry date	Jul 7, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/116
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.