LED structures for reduced non-radiative sidewall recombination
US10193013B2 · kind B2 · utility
8Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Nov 30, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Nov 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/854
Abstract
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.