David P. Bour
152Patents
22h-index
97Co-inventors
93Inventor score
Filing activity: Sep 21, 1988 → Nov 19, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6365429B1 | Method for nitride based laser diode with growth substrate removed using an intermediate substrate | Electricity | 181 | Expired |
| US6455340B1 | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff | Electricity | 172 | Expired |
| US6448102B1 | Method for nitride based laser diode with growth substrate removed | Electricity | 108 | Expired |
| US6757314B2 | Structure for nitride based laser diode with growth substrate removed | Electricity | 80 | Expired |
| US5438584A | Dual polarization laser diode with quaternary material system | Electricity | 64 | Expired |
| US5383211A | TM-polarized laser emitter using III-V alloy with nitrogen | Electricity | 59 | Expired |
| US5708674A | Semiconductor laser or array formed by layer intermixing | Electricity | 53 | Expired |
| US6233265A | AlGaInN LED and laser diode structures for pure blue or green emission | Electricity | 50 | Expired |
| US5412678A | Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers | Electricity | 46 | Expired |
| US5465263A | Monolithic, multiple wavelength, dual polarization laser diode arrays | Electricity | 44 | Expired |
| US5926726A | In-situ acceptor activation in group III-v nitride compound semiconductors | Electricity | 44 | Expired |
| US6163557A | Fabrication of group III-V nitrides on mesas | Electricity | 44 | Expired |
| US5396508A | Polarization switchable quantum well laser | Electricity | 40 | Expired |
| US6345063B1 | Algainn elog led and laser diode structures for pure blue or green emission | Electricity | 38 | Expired |
| US9484492B2 | LED structures for reduced non-radiative sidewall recombination | Electricity | 34 | Active |
| US5977612A | Semiconductor devices constructed from crystallites | Electricity | 28 | Expired |
| US6756325B2 | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6285696A | Algainn pendeoepitaxy led and laser diode structures for pure blue or green emission | Electricity | 27 | Expired |
| US6288417A | Light-emitting devices including polycrystalline gan layers and method of forming devices | Electricity | 26 | Expired |
| US5766981A | Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD | Electricity | 26 | Expired |
| US6744800B1 | Method and structure for nitride based laser diode arrays on an insulating substrate | Electricity | 25 | Expired |
| US6389051B1 | Structure and method for asymmetric waveguide nitride laser diode | Electricity | 25 | Expired |
| US9368582B2 | High power gallium nitride electronics using miscut substrates | Electricity | 22 | Active |
| US8000366B2 | Laser diode with high indium active layer and lattice matched cladding layer | Electricity | 21 | Active |
| US6955933B2 | Light emitting diodes with graded composition active regions | Electricity | 21 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.