III-nitride semiconductor light emitting device and method of producing the same
US10193016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Feb 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
Abstract
Provided is a III-nitride semiconductor light-emitting device having excellent device lifetime as compared with conventional devices and a method of producing the same. A III-nitride semiconductor light-emitting device 100 has an n-type semiconductor layer 30, a light emitting layer 40 containing at least Al, an electron blocking layer 50, and a p-type semiconductor layer 60 in this order. The light emitting layer 40 has a quantum well structure having well layers 41 and barrier layers 42. The electron blocking layer 50 is adjacent to the light emitting layer 40 and is formed from a layer having an Al content higher than that of the barrier layers 42 and the p-type semiconductor layer 60. The electron blocking layer 50 has a Si-based doped region layer 50a.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.