Through backplane laser irradiation for die transfer
US10193038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Mar 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Light emitting devices can be disposed on the front side of a transparent backplane. A laser beam can be irradiated through the transparent backplane and onto a component located on the front side of the transparent backplane. In one embodiment, the component may be a solder material portion that is reflowed to bond the light emitting devices to the transparent backplane. In another embodiment, the component may be a solder material bonded to a defective bonded light emitting device. In this case, the laser irradiation can reflow the solder material to dissociate the defective bonded light emitting device from the transparent backplane. In yet another embodiment, the component may be a device component that is electrically modified by the laser irradiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.